2SB1001 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

SMD Type
Silicon PNP Epitaxial
2SB1001
Transistors
Features
Low frequency power amplifier
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-20
V
VCEO
-16
V
VEBO
-6
V
IC
-2
A
ICP *1
-3
A
PC *2
1
W
Tj
150
Tstg
-55 to +150
*1. PW 10 ms; d 0.02.
*2. Value on the alumina ceramic board (12.5 X 20 X 0.7 mm)
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
V(BR)CBO IC = -10 ìA, IE = 0
V(BR)CEO IC = -1 mA, RBE =
V(BR)EBO IE = -10 ìA, IC = 0
ICBO VCB = -16 V, IE = 0
IEBO VEB = -5 V, IC = 0
hFE VCE = -2 V,IC = -0.1 A
VCE(sat) IC = -1 A,IB = -0.1 A
VBE(sat) IC = -1 A,IB = -0.1 A
fT VCE = -2 V,IC = -10 mA
Cob VCB = -10 V, IE = 0,f = 1 MHz
hFE Classification
Marking
hFE
BH
100 200
BJ
160 320
Min Typ Max Unit
-20
V
-16
V
-6
V
-0.1 ìA
-0.1 ìA
100
320
-0.15 -0.3 V
-1 -1.2 V
150
MHz
50
pF
www.kexin.com.cn ¹