2SB1000-HF_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1000-HF
Transistors
■ Features
● Low frequency power amplifier
● Complementary to 2SD1366-HF
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
(Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-25
-20
-5
-1
-1.5
1
150
-55 to 150
Note.1: PW ≤ 10ms,Duty cycle≤ 20℅
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -20V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-800 mA, IB=-80mA
VBE(sat) IC=-800 mA, IB=-80mA
hFE VCE= -2V, IC= -500 mA
Cob VCB = –10V, IE = 0, f = 1MHz
fT
VCE= -2V, IC= -500mA
■ Classification of hfe
Type
Range
Marking
2SB1000-H-HF
85-170
AH F
2SB1000-J-HF
120-240
AJ F
Unit
V
A
W
℃
Min Typ Max Unit
-25
-20
V
-5
-0.1
uA
-0.1
-0.2 -0.3
V
-0.94 -1.1
85
240
38
pF
200
MHz
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