2SA812_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA812
Transistors
Features
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA)
High Voltage: VCEO = -50 V
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
-60
V
VCEO
-50
V
VEBO
-5.0
V
IC
-100
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.15 +0.02
-0.02
1. Base
2. Emitter
3. Collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage
Base to emitter voltage
Output capacitance
Transition frequency
* Pulsed: PW 350 u s, Duty Cycle 2%
Symbol
Testconditi ons
ICBO VCB = -60 V, IE = 0 A
IEBO VEB = -5.0 V, IC = 0 A
hFE VCE = -6.0 V, IC = -1.0 mA
VCE(sat) IC = -100 mA, IB = -10 mA
VBE VCE = 6.0 V, IC = -1.0 mA
Cob VCE = -10 V, IE = 0 A, f = 1.0 MHz
fT VCE = -6.0 V, IE = 10 mA
hFE Classification
Type
Range
Marking
2SA812-M4
90-180
M4
2SA812-M5
135-270
M5
2SA812-M6
200-400
M6
2SA812-M7
300-600
M7
Min
90
-0.58
Typ
200
-0.18
-0.62
4.5
180
Max
-0.1
-0.1
600
-0.3
-0.68
Unit
A
A
V
V
pF
MHz
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