2SA811A Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

SMD Type
Transistors
PNP Silicon Epitaxial Transistor
2SA811A
Features
High DC current gain.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-120
V
VCEO
-120
V
VEBO
-5
V
IC
-50
mA
PT
200
mW
Tj
150
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulse test: tp 350 ìs; d 0.02.
Symbol
Testconditons
ICBO VCB = -120V, IE=0
IEBO VEB = -5V, IC=0
VCE = -6V , IC = -1mA
hFE
VCE = -6V , IC = -0.1mA
VCE(sat) IC = -10mA , IB = -1mA
VBE VCE = -6V , IC = -1mA
fT VCE = -6V , IE = 1mA
Cob VCB = -30V , IE = 0 , f = 1.0MHz
Min Typ Max Unit
-50 nA
-50 nA
135 500 900
100 500
-0.09 -0.30 V
-0.55 -0.61 -0.65 V
50 90
MHz
2.0 3.0 pF
hFE Classification
Marking
hFE
C15
135 270
C16
200 400
C17
300 600
C18
450 900
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