2SA2058_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA2058
Transistors
■ Features
● High DC current gain: hFE = 200 to 500 (IC = −0.2 A)
● Low collector-emitter saturation voltage:
VCE (sat) = −0.19 V (max)
● High-speed switching: tf = 25 ns (typ.)
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-20
Collector - Emitter Voltage
VCEO
-10
V
Emitter - Base Voltage
VEBO
-7
Collector Current - Continuous
Collector Current - Pulse
IC
-1.5
A
ICP
-2.5
Base Current
IB
-150
mA
Collector Power Dissipation
PC
t=10s (Note.1)
500
mW
750
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
Note.1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm ² )
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
Collector- emitter breakdown voltage
VCEO Ic= -10 mA，IB= 0
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
Collector-base cut-off current
ICBO VCB= -20V , IE=0
Emitter cut-off current
IEBO VEB= -7V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-600mA, IB=-20mA
Base - emitter saturation voltage
VBE(sat) IC=-600mA, IB=-20mA
DC current gain
VCE= -2V, IC= -200mA
hFE
VCE= -2V, IC= -600mA
Rise Time
Storage Time
Fall Time
tr
See Figure 1 circuit diagram.
tstg VCC = −6 V, RL = 10 Ω
tf
−IB1 = IB2 = −20 mA
Collector output capacitance
Cob VCB= -10V, IE= 0,f=1MHz
■ Marking
Marking
WM
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-20
-10
V
-7
-0.1
uA
-0.1
-0.19
V
-1.1
200
500
125
50
115
ns
25
12
pF
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