2SA2018_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SA2018
■ Features
● A collector current is large.
● Low VCE(sat).
VCE(sat)≤-250mV at IC = -200mA / IB = -10mA
SOT-523
1.6 +0.1
-0.1
1.0 +0.1
-0.1
0.2 +0.05
-0.05
2
1
3
0.5 ^+0.1
-0.1
0.3±0.05
U nit: m m
0.15±0.05
1. Base
2. Emitter
3. Collecter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-15
Collector - Emitter Voltage
VCEO
-12
V
Emitter - Base Voltage
VEBO
-6
Collector Current - Continuous
IC
-500
mA
Collector Current - Pulse
ICP
-1
A
Collector Power Dissipation
PC
150
mW
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，IB= 0
VEBO IE= -100μA， IC=0
ICBO VCB= -15V , IE=0
IEBO VEB= -6V , IC=0
VCE(sat) IC=-200mA, IB=-10mA
VBE(sat) IC=-200mA, IB=-10mA
hFE VCE= -2V, IC= -10mA
Cob VCB= -10V, IE= 0,f=1MHz
fT VCE= -2V, IC= -10mA,f=100MHz
■ Marking
Marking
BW
Min Typ Max Unit
-15
-12
V
-6
-0.1
uA
-0.1
-0.25
V
-1.2
270
680
6.5
pF
260
MHz
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