2SA1981SF_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
TransistIoCrs
PNP Transistors
2SA1981SF
Features
High hFE: hFE=100 to 320
● Complementary pair with 2SC5344SF
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 ^+0.02
-0.02
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Output capacitance
Transition frequency
Symbol
Rating
Unit
VCBO
-35
V
VCEO
-30
V
VEBO
-5
V
IC
-800
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Symbol
Test Conditions
VCBO Ic= -500 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -35 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-500 mA, IB=- 20mA
VBE(sat) IC=-500 mA, IB=- 20mA
hFE VCE= -1V, IC= -100mA
Cob VCE= -10V,IE=0,f=1MHz
fT
VCE= -5V, IE= -10mA
Min Typ Max Unit
-35
-30
V
-5
-100
nA
-100
-0.5
V
-1.2
100
320
19
pF
120
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SA1981SF-O
100-200
EAO*
2SA1981SF-Y
160-320
EAY*
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