2SA1979UF_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1979UF
Transistors
■ Features
● Large collector current :
ICMax=-500mA
● Complements to 2SC5342UF
1 Base
2 Emitter
3 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-40
VCEO
-32
V
VEBO
-5
IC
-500
mA
PC
200
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，IB= 0
VEBO IE= -100μA， IC=0
ICBO VCB= -40V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-100mA, IB=-10mA
VBE(sat) IC=-100mA, IB=-10mA
hFE VCE= -1V, IC= -100mA
Cob VCB= -6V, IE= 0,f=1MHz
fT
VCE= -6V, IC= -20mA
■ Classification of hfe
Type
2SA1979UF-O
Range
70-140
Marking
AO
2SA1979UF-Y
120-240
AY
Min Typ Max Unit
-40
-32
V
-5
-0.1
uA
-0.1
-0.25
V
-1.2
70
240
7.5
pF
200
MHz
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