2SA1978 Datasheet, PDF (1/1 Pages) NEC – PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER

SMD Type
TransistIoCrs
PNP Eitaxial Silicon Transistor
2SA1978
Features
High fT (fT=5.5GHz TYP).
High gain |S21e|²=10.0dB TYP.@f=1.0GHz,Vce=-10V,Ic=-15mA
High-speed switching characterstics
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-20
V
VCEO
-12
V
VEBO
-3.0
V
IC
-50
mA
PT
200
mW
Tj
150
Tstg
-65 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min Typ Max Unit
Collector cutoff current
ICBO VCB = -10V
-10 ìA
Emitter cutoff current
IEBO VEB = -2V
-10 ìA
DC current gain
hFE VCE =-10V,Ic=-15mA
20 40 100
Gain bandwidth product
fT VCE = -10V ,Ic=-15mA
4.0 5.5
GHz
Collector capacitance
Cre* VCB = -10V , IE = 0 , f = 1MHz
0.5 1 pF
Insertion Power Gain
|S21e|2 Vce=-10V,Ic=-15mA,.f=1.0GHZ
8.0 10.0
dB
Noise Figure
NF Vce=-10V,Ic=-3mA,.f=1GHZ
2.0 3 dB
*.Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
hFE Classification
Marking
Rank
hFE
T93
FB
20 100
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