2SA1977 Datasheet, PDF (1/1 Pages) NEC – PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER

SMD Type
TransistIoCrs
PNP Epitaxial Silicon Transistor
2SA1977
Features
High fT :fT = 8.5 GHz TYP.
High gain
| S21e |² = 12.0 dB TYP. @f = 1.0 GHz, VCE = -8 V, IC = -20 mA
High-speed switching characterstics
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-20
V
VCEO
-12
V
VEBO
-3.0
V
IC
-50
mA
PT
200
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min Typ Max Unit
Collector cutoff current
ICBO VCB = -10 V
-0.1 ìA
Emitter cutoff current
IEBO VEB = -1 V
-0.1 ìA
DC current gain
hFE VCE = -8 V, IC = -20 mA
20
100
Gain Bandwidth Product
fT VCE = -8 V, IC = -20 mA, f = 1 GHz
6.0 8.5
V
Collector Capacitance
Cre* VCB = -10 V, IE = 0, f = 1 MHz
0.5 1
V
Insertion Power Gain
| S21e | ² VCE = -8 V, IC = -20 mA, f = 1.0 GHz
8.0 12.0
MHz
Noise Figure
NF VCE = -8 V, IC = -3 mA, f = 1 GHz
1.5 3 pF
*.Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
hFE Classification
Marking
Rank
hFE
T92
FB
20 100
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