2SA1954_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1954
Transistors
■ Features
● Low saturation voltage: VCE (sat) (1) = −15 mV (typ.)
@IC = −10 mA/IB = −0.5 mA
● Large collector current: IC = −500 mA (max)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector-emitter on resistance
Turn-ON Time
Storage Time
Turn-OFF Time
Collector output capacitance
Transition frequency
■ Classification of hfe
Type
2SA1954-A 2SA1954-B
Range
300-600
500-1000
Marking
GA
GB
Symbol
Rating
Unit
VCBO
-15
VCEO
-12
V
VEBO
-5
IC
-500
mA
IB
-50
PC
100
mW
TJ
125
℃
Tstg
-55 to 125
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，IB= 0
VEBO IE= -100μA， IC=0
ICBO VCB= -15V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat)1 IC=-10mA, IB=-0.5mA
VCE(sat)2 IC=-200mA, IB=-10mA
VBE(sat) IC=-200mA, IB=-10mA
hFE VCE= -2V, IC= -10mA
Ron IB=-1mA,Vin=-1Vrms,f=1KHz
ton
tstg
See specified Test Circuit.
toff
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -2V, IC= -10mA
1 Base
2 Emitter
3 Collector
Min Typ Max Unit
-15
-12
V
-5
-0.1
uA
-0.1
-15 -30
mV
-110 -250
-0.87 -1.2 V
300
1000
0.9
Ω
40
280
ns
45
4.2
pF
80 130
MHz
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