2SA1948 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SMALL-SIGNAL TRANSISTOR

SMD Type
Silicon PNP Epitaxia
2SA1948
Transistors
Features
High fT fT=200MHz typ, low Cob Cob=3.5pF typ
Small package for mounting
High voltage VCEO=120V
High collector dissipation Pc=500mW
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-120
V
VCEO
-120
V
VEBO
-5
V
IC
-100
mA
PC
500
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Gain band width product
Collector output capacitance
Symbol
Testconditons
V (BR) CBO IC = -10 ìA, IE = 0
V (BR) CEO IC = -1 mA,RBE =
V (BR) EBO IE = -10 ìA, IC = 0
ICBO VCB = -100 V, IE = 0
IEBO VEB = -4 V, IC = 0
hFE VCE = -10 V, IC = -10 mA
VCE(sat) IC = -50 mA, IB = -2.5 mA
fT VCE = -10 V, IE = 10 mA
Cob VCB=-10V,IE=0,f=1MHz
hFE Classification
Marking
ACE
Rank
hFE
E
150 300
ACF
F
250 500
ACG
G
400 800
Min Typ Max
-120
-120
-5
-0.1
-0.1
150
800
-0.17 -0.6
200
3.5
Unit
V
V
V
ìA
ìA
V
MHz
pF
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