2SA1947_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1947
Transistors
■ Features
● High fT,fT=100MHz(typ)
● High collector current ICM=-1.5A
● Small package for mounting
● Complements to 2SC5214
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-30
Collector - Emitter Voltage
VCEO
-25
V
Emitter - Base Voltage
VEBO
-4
Collector Current - Continuous
Colletor Current - Pulse
IC
-1
A
ICM
-1.5
Collector Power Dissipation
PC
0.5
W
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，RBE= ∞
VEBO IE= -100μA， IC=0
ICBO VCB= -25 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-500mA, IB=-25mA
VBE(sat) IC=-500mA, IB=-25mA
hFE VCE= -1V, IC= -500mA
fT
VCE= -6V, IE= 10mA
Min Typ Max Unit
-30
-25
V
-4
-1
uA
-1
-0.5
V
-1.2
55
300
100
MHz
■ Classification of hfe
Type
2SA1947-C
Range
55-110
Marking
ABC
2SA1947-D
90-180
ABD
2SA1947-E
150-300
ABE
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