2SA1946_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1946
Transistors
■ Features
● Low collector saturation voltage
● High fT,fT=180MHz(typ)
● High collector current ICM=-1A
● Small package for mounting
● Complements to 2SC5212
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Colletor Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-25
VCEO
-20
V
VEBO
-4
IC
-0.7
A
ICM
-1
PC
0.5
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，RBE= ∞
VEBO IE= -100μA， IC=0
ICBO VCB= -25 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-500mA, IB=-25mA
VBE(sat) IC=-500mA, IB=-25mA
hFE VCE= -4V, IC= -100mA
fT
VCE= -6V, IE= 10mA
■ Classification of hfe
Type
Range
Marking
2SA1946-E
150-300
AAE
2SA1946-F
250-500
AAF
2SA1946-G
400-800
AAG
Min Typ Max Unit
-25
-20
V
-4
-1
uA
-1
-0.25 -0.5
V
-1.2
150
800
180
MHz
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