2SA1945_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1945
Transistors
■ Features
● High voltage
● High fT,fT=150MHz(typ)
● High collector current ICM= -600mA
● Small package for mounting
● Complements to 2SC5211
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-55
Collector - Emitter Voltage
VCEO
-50
V
Emitter - Base Voltage
VEBO
-4
Collector Current - Continuous
Colletor Current - Pulse
IC
-400
mA
ICM
-600
Collector Power Dissipation
PC
0.5
W
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，RBE= ∞
VEBO IE= -100μA， IC=0
ICBO VCB= -25 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-200mA, IB=-10mA
VBE(sat) IC=-200mA, IB=-10mA
hFE VCE= -4V, IC= -100mA
fT
VCE= -10V, IE= 10mA
■ Classification of hfe
Type
2SA1945-D
Range
90-180
Marking
ZD
2SA1945-E
150-300
ZE
2SA1945-F
250-500
ZF
Min Typ Max Unit
-55
-50
V
-4
-1
uA
-1
-0.17 -0.5
V
-1.2
90
500
150
MHz
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