2SA1945 Datasheet, PDF (1/1 Pages) Isahaya Electronics Corporation – FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

SMD Type
Silicon PNP Epitaxial
2SA1945
Features
High voltage VCEO=-50V
High fT: fT=150MHz typ
Excellent linearity of DC forward current gain
High collector current Icm=600mA
Small package for mounting
TransistIoCrs
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Collector-emitter voltage
Peak collector current
Collector current
Collector dissipation (Ta=25 )
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-55
V
VEBO
-4
V
VCEO
-50
V
ICM
-600
mA
IC
-400
mA
PC
500
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Colllector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Gain bandwidth product
Symbol
Testconditons
V(BR)CBO IC=-10ìA,IE=0
V(BR)EBO IE=-10ìA,IC=0
V(BR)CEO IC=-100ìA,RBE=
ICBO VCB=-25V,IE=0
IEBO VEB=-2V,IC=0
hFE VCE=-4V,IC=-100mA
VCE(sat) IC=-200mA,IB=-10mA
fT VCE=-6V,IE=-10mA
Min Typ Max Unit
-55
V
-4
V
-50
V
-1 ìA
-1 ìA
90
500
-0.17 -0.5 V
150
MHz
hFE Classification
Marking
hFE
ZD
90 180
ZE
150 300
ZF
250 500
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