2SA1944_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1944
Transistors
■ Features
● High voltage
● Low collector-to-emitter saturation voltage.
● High hFE hFE=400 to 800
● Small package for mounting
● Complements to 2SC5209
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Symbol
Rating
Unit
VCBO
-50
VCEO
-50
V
Emitter - Base Voltage
VEBO
-6
Collector Current - Continuous
Colletor Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
IC
-1
A
ICM
-2
PC
0.5
W
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
■ Classification of hfe
Range
400-800
Marking
XG
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，RBE= ∞
VEBO IE= -100μA， IC=0
ICBO VCB= -40 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-500mA, IB=-10mA
VBE(sat) IC=-500mA, IB=-10mA
hFE VCE= -6V, IC= -100mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -10V, IE= 10mA
Min Typ Max Unit
-50
-50
V
-6
-0.1
uA
-0.1
-0.2 -0.5
V
-1.2
400
800
30
pF
90
MHz
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