2SA1900 Datasheet, PDF (1/1 Pages) Rohm – Medium Power Transistor (-50V, -1A)

SMD Type
Medium power transistor
2SA1900
TransistIoCrs
Features
Low saturation voltage, typically VCE(sat) = ?0.15V at IC /
IB = ?500mA / ?50mA
PC=2W (on 40X40X0.7mm ceramic board)
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter Voltage
Collector-base Voltage
Emitter-base Voltage
Collector current
Symbol
VCEO
VCBO
VEBO
IC
Collector power dissipation
PC
Jumction temperature
Tj
Storage temperature
Tstg
*1 Single pulse Pw=20ms, Duty=1/2
*2 When mounted on a 40X40X0.7mm seramic board.
Rating
-60
-50
-5
-1
-2
0.5
2
150
-55 to +150
Unit
V
V
V
A
A(Pulse) *1
W
W *2
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltae
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-Emitter Saturation Voltage
DC current transfer ratio
Transition frequency
Output Capacitance
Symbol
Testconditons
BVCBO IC = -50µA
BVCEO IC = -1mA
BVEBO IE = -50µA
ICBO VCB = -40V
IEBO VEB = -4V
VCE(sat) IC/IB = -500mA/-50mA
hFE VCE/IC = -3V/-0.5A
fT VCE = -5V , IE = 50mA , f=100MHz
Cob VCB = -10V , IE = 0A , f=1MHz
Min Typ Max Unit
-60
V
-50
V
-5
V
-0.1 ìA
-0.1 ìA
-0.4 V
120
270
150
MHz
20
pF
Marking
Marking
ALQ
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