2SA1890_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1890
Transistors
■ Features
● Low collector to emitter saturation voltage VCE(sat).
● High collector to emitter voltage VCEO.
● Complementary to 2SC5026.
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-80
Collector - Emitter Voltage
VCEO
-80
V
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
Colletor Current - Pulse
IC
-1
A
ICP
-1.5
Collector Power Dissipation
PC
1
W
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，IB= 0
VEBO IE= -100μA， IC=0
ICBO VCB= -40 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-500mA, IB=-50mA
VBE(sat) IC=-500mA, IB=-50mA
VCE= -2V, IC= -100mA
hFE
VCE= -2V, IC= -500mA
Cob VCB= -10V, IE= 0,f=1MHz
fT VCE= -10V, IE= 50mA,f=200MHz
■ Classification of hfe(1)
Type
2SA1890-Q
Range
120-240
Marking
1ZQ
2SA1890-R
170-340
1ZR
Min Typ Max Unit
-80
-80
V
-5
-0.1
uA
-0.1
-0.2 -0.3
V
-0.85 -1.2
120
340
60
15 30 pF
120
MHz
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