2SA1890 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

SMD Type
Silicon PNP Epitaxial Planar
2SA1890
Transistors
Features
Low collector-emitter saturation voltage VCE(sat)
High collector-emitter voltage (Base open) VCEO
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
0.48+0.1
-0.1
0.53+0.1
-0.1
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-50
V
VEBO
-5
V
IC
-50
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
1. Base
2. Collector
3. Emiitter
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
VCBO IC = -10 ìA, IE = 0
VCEO IC = -1 mA, IB = 0
VEBO IE = -10 ìA, IC = 0
ICBO VCB = -40 V, IE = 0
hFE VCE = -2 V, IC = -100 mA
VCE(sat) IC = -500 mA, IB = -50 mA
VBE(sat) IC = -500 mA, IB = -50 mA
fT VCB = -10 V, IE = 50 mA, f = 200 MHz
Cob VCB = -10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
-80
V
-80
V
-5
V
-0.1 ìA
120
340
-0.2 -0.3 V
-0.85 -1.2 V
120
MHz
15 30 pF
hFE Classification
Marking
Rank
hFE
1Z
R
S
120 240
170 340
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