2SA1875_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SA1875
■ Features
● High fT : fT=400MHz(typ).
● High breakdown voltage
● Large current capacitance.
● Complements to 2SC4976
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Colletor Current - Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Tc=25℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Reverse Transfer Capacitance
Transition frequency
■ Classification of hfe(1)
Type
Range
2SA1875-D
60-120
2SA1875-E
100-200
Symbol
Rating
Unit
VCBO
-200
VCEO
-200
V
VEBO
-3
IC
-300
ICP
-600
mA
IB
-30
0.8
PC
W
12
TJ
150
℃
Tstg
-55 to 150
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -150 V , IE=0
IEBO VEB= -2V , IC=0
VCE(sat) IC=-50mA, IB=-5mA
VBE(sat) IC=-50mA, IB=-5mA
VCE= -10V, IC= -50mA
hFE
VCE= -10V, IC= -250mA
Cob VCB= -30V, IE= 0,f=1MHz
Cce VCB= -30V, IE= 0,f=1MHz
fT
VCE= -10V, IC= -100mA
2SA1875-F
160-320
1 Base
2 Collector
3 Emitter
Min Typ Max Unit
-200
-200
V
-3
-0.1
uA
-1
-1
V
-1
60
320
20
5
pF
4.2
400
MHz
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