2SA1832_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
■ Features
● High voltage and high current
● Excellent hFE linearity
● Complementary to 2SC4738
PNP Transistors
2SA1832
SOT-523
1.6 +0.1
-0.1
1.0 +0.1
-0.1
0.2 +0.05
-0.05
2
1
U nit: m m
0.15±0.05
3
0.5 ^+0.1
-0.1
0.3±0.05
1. Base
2. Emitter
3. Collecter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
-50
-50
-5
-150
100
125
125
-65 to 125
Unit
V
mA
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -50 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-100 mA, IB=-10mA
VBE(sat) IC=-100 mA, IB=-10mA
hFE VCE= -6V, IC= -2mA
Cob VCB= -10V, IE= 0mA,f=1MHz
fT
VCE= -10V, IC= -1mA
■ Classification of hfe
Type
2SA1832-O
Range
70-140
Marking
SO
2SA1832-Y
120-240
SY
2SA1832-G
200-400
SG
Min Typ Max Unit
-50
-50
V
-5
-100
nA
-100
-0.1 -0.3
V
-1.2
70
400
4
7 pF
80
MHz
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