2SA1813_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1813
Transistors
■ Features
● High DC current gain (hFE=500 to 1200).
● Low collector-to-emitter saturation voltage
● High VEBO
1 Base
2 Emitter
3 Colletor
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-30
Collector - Emitter Voltage
VCEO
-25
V
Emitter - Base Voltage
VEBO
-15
Collector Current - Continuous
Collector Current - Pulse
IC
-150
mA
ICM
-300
Collector Power Dissipation
PC
200
mW
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， RBE=∞
VEBO IE= -100 u A， IC=0
ICBO VCB= -20 V , IE=0
IEBO VEB= -10V , IC=0
VCE(sat) IC=-50mA, IB=-1mA
VBE(sat) IC=-50mA, IB=-1mA
hFE VCE= -5V, IC= -1mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -10V, IC= -10mA
Min Typ Max Unit
-30
-25
V
-15
-100
nA
-100
-0.15 -0.3
V
-0.78 -1.1
500 800 1200
2.6
pF
210
MHz
■ Marking
Marking
KS
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