2SA1812-HF_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1812-HF
Transistors
■ Features
● High breakdown voltage, BVCEO=-400V.
● High switching speed, typically tf :1us at IC =-100mA.
●High-voltage Switching Transistor
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Power Dissipation
PC
Junction Temperature
TJ
Storage Temperature range
Tstg
Note.1: When mounted on a 40X40X0.7mm ceramic board.
■ Electrical Characteristics Ta = 25℃
Rating
-400
-400
-7
-0.5
-1
0.5
2
150
-55 to 150
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on time
Storage time
Fall time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -400 V , IE=0
IEBO VEB= -6V , IC=0
VCE(sat) IC=-100 mA, IB=-10mA
VBE(sat) IC=-100 mA, IB=-10mA
hFE VCE= -5V, IC= -50mA
ton
IC= -100mA, RL= 1.5kΩ
tstg IB1= -IB2=-10mA
tf
VCC= 0 to -150V
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -5V, IE= 50mA,f=5MHz
■ Marking
Marking
AJ* F
Unit
V
A
W
℃
Min Typ Max Unit
-400
-400
V
-7
-10
uA
-10
-1
V
-1.2
82
270
0.6
2.7
uS
1
18
pF
12
MHz
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