2SA1797_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1797
Transistors
■ Features
● Low saturation voltage
● Excellent DC current gain characteristics
● Complements to 2SC4672
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
VCBO
-50
VCEO
-50
V
VEBO
-6
IC
-2
A
ICM
-3
Collector Power Dissipation
PC
500
mW
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -50 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -50μA， IC=0
ICBO VCB= -50 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-1A, IB=-50mA
VBE(sat) IC=-1A, IB=-50mA
hFE VCE= -2V, IC= -500mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -2V, IC= -500mA,f=100MHz
Min Typ Max Unit
-50
-50
V
-6
-100
nA
-100
-0.35
V
-1.2
82
270
36
pF
200
MHz
■ Classification of hfe
Type
2SA1797-P
Range
82-180
Marking
AGP
2SA1797-Q
120-270
AGQ
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