2SA1766_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1766
Transistors
■ Features
● Adoption of FBET, MBIT processes.
● High DC current gain (hFE=500 to 1200).
● Large current capacity.
● Low collector-to-emitter saturation voltage.
● High VEBO.
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Collector - Base Voltage
VCBO
Collector - Emitter Voltage
VCEO
Emitter - Base Voltage
VEBO
Collector Current - Continuous
IC
Collector Current - Pulse
ICP
Base Current
IB
Collector Power Dissipation (Note.1)
PC
Junction Temperature
TJ
Storage Temperature range
Tstg
Note.1: Mounted on ceramic board (250mm ² X 0.8mm)
Rating
-30
-25
-15
-300
-500
-60
1.3
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 uA， IE=0
VCEO Ic= -1 mA，RBE= ∞
VEBO IE= -100 uA， IC=0
ICBO VCB= -20 V , IE=0
IEBO VEB= -10 V , IC=0
VCE(sat) IC=-200 mA, IB=-4 mA
VBE(sat) IC=-200 mA, IB=-4 mA
hFE(1) VCE= -5V, IC= -10 mA
hFE(2) VCE= -5V, IC= -200 mA
Cob VCB= -10V, f=1MHz
fT
VCE= -10V, IC= -10 mA
■ Marking
Marking
AL
Unit
V
mA
W
℃
Min Typ Max Unit
-30
-25
V
-15
-0.1
uA
-0.1
-0.12 -0.5
V
-0.77 -1.1
500 800 1200
200
12
pF
100
MHz
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