2SA1766 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – High-hFE, Low-Frequency General-Purpose Amp Applications

SMD Type
PNP Epitaxial Planar Silicon
2SA1766
TransistIoCrs
Features
Adoption of FBET, MBIT processes.
High DC current gain (hFE=500 to 1200).
Large current capacity.
Low collector-to-emitter saturation voltage.
High VEBO.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Base current
Collector dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-30
V
VCEO
-25
V
VEBO
-15
V
IC
-300
mA
ICP
-500
mA
IB
-60
mA
PC
1.3
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Common base output capacitance
Collector-to-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Marking
Marking
AL
Symbol
Testconditons
IcBO VCB = -20V , IE = 0
IEBO VEB = -10V , IC = 0
hFE VCE = -5V , IC = -10mA
fT VCE = -10V , IC = -10mA
Cob VCB = -10V , f = 1MHz
VCE(sat) IC = -200mA , IB =-4mA
VBE(sat) IC = -200A , IB =-4mA
V(BR)CBO IC = -10ìA , IE = 0
V(BR)CEO IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
500 800 1200
100
MHz
12
pF
-0.12 -0.5 V
-0.77 -1.1 V
-30
V
-25
V
-15
V
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