2SA1745_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1745
Transistors
■ Features
● Low collector-to-emitter saturation voltage.
● Complementary to 2SC4555
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-20
-15
-5
-0.5
-1
150
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 uA， IE=0
VCEO Ic= -1 mA，RBE= ∞
VEBO IE= -100 uA， IC=0
ICBO VCB= -15 V , IE=0
IEBO VEB= -4V , IC=0
IC=-5 mA, IB=-0.5 mA
VCE(sat)
IC=-200 mA, IB=-10 mA
VBE(sat) IC=-200 mA, IB=-10 mA
hFE(1) VCE= -2V, IC= -10 mA
hFE(2) VCE= -2V, IC= -400 mA
Cob VCB= -10V, f=1MHz
fT
VCE= -2V, IC= -50 mA
■ Classification of hfe(1)
Type
2SA1745-ES3
Range
135-270
Marking
ES3
2SA1745-ES4
200-400
ES4
2SA1745-ES5
300-600
ES5
1.Base
2.Emitter
3.Collector
Unit
V
A
mW
℃
Min Typ Max Unit
-20
-15
V
-5
-0.1
uA
-0.1
-15 -35
mV
-200 -360
-0.95 -1.2 V
135
600
70
6.5
pF
400
MHz
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