2SA1740 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – High-Voltage Driver Applications

SMD Type
Transistors
High-Voltage Driver Applications
2SA1740
Features
High Breakdown Voltage
Adoption of MBIT Process
Excellent hFE Linearlity.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-200
mA
Collector Current (Pulse)
ICP
-400
mA
Collector Power Dissipation
PC *
1.3
W
Jumction temperature
Tj
150
Storage temperature Range
Tstg
* Mounted on ceramic board (250 mm² x 0.8 mm)
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Gain-Bandwidth Product
Collector Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Testconditons
ICBO VCB = -300V , IE = 0
IEBO VEB = -4V , IC = 0
V(BR)CBO IC = -10uA , IE = 0
V(BR)CEO IC = -1mA , RBE =
V(BR)EBO IE = -10uA , IC = 0
hFE VCE = -10V , IC = -50mA
VCE(sat) IC = -50mA , IB = -5mA
VBE(sat) IC = -50mA , IB = -5mA
fT VCE = -30V , IC = -10mA
Cob VCB = -30V , IE = 0 , f = 1MHz
Cre VCB = -30V , IE = 0 , f = 1MHz
ton _{See Test Circuit.}
toff
Min Typ Max Unit
-0.1
A
-0.1
A
-400
V
-400
V
-5
V
60
200
-0.8 V
-1.0 V
70
MHz
5
pF
4
pF
0.25
ìs
5.0
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