2SA1736_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1736
Transistors
■ Features
● Low saturation voltage
● High speed switching time
● Small flat package
● PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
● Complementary to 2SC4541
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-60
Collector - Emitter Voltage
VCEO
-50
V
Emitter - Base Voltage
VEBO
-6
Collector Current - Continuous
BaseCurrent
IC
-3
A
IB
-0.6
Collector Power Dissipation
0.5
PC
W
(Note.1)
1
Junction Temperature
TJ
Storage Temperature range
Tstg
Note.1: Mounted on ceramic board (250mm ² X 0.8mm)
■ Electrical Characteristics Ta = 25℃
150
℃
-55 to 150
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector- base breakdown voltage
VCBO Ic= -1 mA， IE=0
-60
Collector- emitter breakdown voltage
VCEO Ic= -10 mA，IB= 0
-50
V
Emitter - base breakdown voltage
VEBO IE= -1 mA， IC=0
-6
Collector-base cut-off current
Emitter cut-off current
ICBO
IEBO
VCB= -60 V , IE=0
VEB= -6V , IC=0
-0.1
uA
-0.1
Collector-emitter saturation voltage
Base - emitter saturation voltage
VCE(sat) IC=-1.5 A, IB=-75 mA
VBE(sat) IC=-1.5 A, IB=-75 mA
-0.5
V
-1.2
DC current gain
hFE(1)
hFE(2)
VCE= -2V, IC= -100 mA
VCE= -2V, IC= -2 A
120
400
40
Turn-on Time
ton
0.1
Storage time
tstg
See specified Test Circuit
0.2
us
Fall time
tf
0.1
Collector output capacitance
Cob VCB= -10V,IE=0, f=1MHz
32
pF
Transition frequency
fT
VCE= -2V, IC= -100 mA
100
MHz
■ Marking
Marking
L*D
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