2SA1735_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1735
Transistors
■ Features
● Low saturation voltage
● High speed switching time
● Small flat package
● PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
● Complementary to 2SC4540
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
-60
Collector - Emitter Voltage
VCEO
-50
Emitter - Base Voltage
VEBO
-6
Collector Current - Continuous
IC
-1
BaseCurrent
IB
-0.2
Collector Power Dissipation
0.5
PC
(Note.1)
1
Junction Temperature
TJ
150
Storage Temperature range
Tstg
Note.1: Mounted on ceramic board (250mm ² X 0.8mm)
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= -1 mA， IE=0
Collector- emitter breakdown voltage
VCEO Ic= -10 mA，IB= 0
Emitter - base breakdown voltage
VEBO IE= -1 mA， IC=0
Collector-base cut-off current
ICBO VCB= -60 V , IE=0
Emitter cut-off current
IEBO VEB= -6V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-500 mA, IB=-25 mA
Base - emitter saturation voltage
VBE(sat) IC=-500 mA, IB=-25 mA
DC current gain
hFE(1)
hFE(2)
VCE= -2V, IC= -100 mA
VCE= -2V, IC= -700 mA
Turn-on Time
ton
Storage time
tstg
See specified Test Circuit
Fall time
tf
Collector output capacitance
Cob VCB= -10V,IE=0, f=1MHz
Transition frequency
fT
VCE= -2V, IC= -100 mA
■ Marking
Marking
L*C
Unit
V
A
W
℃
Min Typ Max Unit
-60
-50
V
-6
-0.1
uA
-0.1
-0.5
V
-1.2
120
400
40
0.1
0.25
us
0.1
16
pF
100
MHz
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