2SA1734_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1734
Transistors
■ Features
● Low saturation voltage
● High speed switching time
● Small flat package
● PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
● Complementary to 2SC4539
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-40
Collector - Emitter Voltage
VCEO
-30
V
Emitter - Base Voltage
VEBO
-6
Collector Current - Continuous
BaseCurrent
IC
-1.2
A
IB
-0.3
Collector Power Dissipation
0.5
PC
W
(Note.1)
1
Junction Temperature
TJ
Storage Temperature range
Tstg
Note.1: Mounted on ceramic board (250mm ² X 0.8mm)
150
℃
-55 to 150
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on Time
Storage time
Fall time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -1 mA， IE=0
VCEO Ic= -10 mA，IB= 0
VEBO IE= -1 mA， IC=0
ICBO VCB= -40 V , IE=0
IEBO VEB= -6V , IC=0
VCE(sat) IC=-700 mA, IB=-35 mA
VBE(sat) IC=-700 mA, IB=-35 mA
hFE(1) VCE= -2V, IC= -100 mA
hFE(2) VCE= -2V, IC= -1 A
ton
tstg
See specified Test Circuit
tf
Cob VCB= -10V, IE=0,f=1MHz
fT
VCE= -2V, IC= -100 mA
Min Typ Max Unit
-40
-30
V
-6
-0.1
uA
-0.1
-0.5
V
-1.2
120
400
40
0.1
0.2
us
0.1
16
pF
100
MHz
■ Marking
Marking
L*B
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