2SA1734 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

SMD Type
Silicon PNP Epitaxial
2SA1734
Features
Low saturation voltage: VCE(sat) = -0.5 V (max) (IC = -700 mA).
High speed switching time: tstg = 0.2ìs (typ.).
Small flat package.
PC = 1.0 to 2.0 W (mounted on ceramic substrate).
TransistIoCrs
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-40
V
Collector-emitter voltage
VCEO
-30
V
Emitter-base voltage
VEBO
-6
V
Collector current
IC
-2
A
Base current
IB
-1.2
A
Collector power dissipation
PC
500
mW
PC *
1000
Junction temperature
Tj
150
Storage temperature range
Tstg
* Mounted on ceramic substrate (250 mm² X 0.8 t)
-55 to +150
www.kexin.com.cn ¹