2SA1730_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1730
Transistors
■ Features
● Large current capacity.
● Low collector-to-emitter saturation voltage.
● Fast switching speed.
● Small-sized package.
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
VCBO
VCEO
VEBO
Rating
-50
-40
-5
Collector Current - Continuous
IC
-3
Collector Current -Pulse
Collector Power Dissipation (Note.1)
Junction Temperature
ICp
-6
PC
1.5
TJ
150
Storage Temperature range
Tstg
Note.1: Mounted on ceramic board (250mm ² X 0.8mm)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
-55 to 150
Test Conditions
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
VCBO
VCEO
VEBO
ICBO
Ic= -100 uA， IE=0
Ic= -1 mA，RBE= ∞
IE= -100 uA， IC=0
VCB= -40 V , IE=0
Emitter cut-off current
IEBO VEB= -3V , IC=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
VCE(sat)
VBE(sat)
hFE(1)
hFE(2)
IC=-1.5 A, IB=-75 mA
IC=-1.5 A, IB=-75 mA
VCE= -2V, IC= -500 mA
VCE= -2V, IC= -3 A
Turn-on Time
Storage time
Tutn-off time
Collector output capacitance
Transition frequency
ton
tstg
See specified Test Circuit
toff
Cob VCB= -10V, f=1MHz
fT
VCE= -2V, IC= -500 mA
■ Classification of hfe(1)
Type
2SA1730-Q
2SA1730-R
2SA1730-S
Range
70-140
100-200
140-280
Marking
AHQ
AHR
AHS
Unit
V
A
W
℃
Min Typ Max
-50
-40
-5
-1
-1
-0.3 -0.8
-0.95 -1.3
70
280
25
50 100
120 220
150 300
35
300
Unit
V
uA
V
ns
pF
MHz
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