2SA1729_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1729
Transistors
■ Features
● Large current capacity.
● Low collector-to-emitter saturation voltage.
● Fast switching speed.
● Small-sized package.
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
-50
Collector - Emitter Voltage
VCEO
-40
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
IC
-1.5
Collector Current -Pulse
ICp
-3
Collector Power Dissipation (Note.1)
PC
1.3
Junction Temperature
TJ
150
Storage Temperature range
Tstg
Note.1: Mounted on ceramic board (250mm ² X 0.8mm)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
-55 to 150
Test Conditions
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
VCBO
VCEO
VEBO
ICBO
Ic= -100 uA， IE=0
Ic= -1 mA，RBE= ∞
IE= -100 uA， IC=0
VCB= -40 V , IE=0
Emitter cut-off current
IEBO VEB= -3V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-800 mA, IB=-40 mA
Base - emitter saturation voltage
VBE(sat) IC=-800 mA, IB=-40 mA
DC current gain
hFE(1)
hFE(2)
VCE= -2V, IC= -100 mA
VCE= -2V, IC= -1.5 A
Turn-on Time
Storage time
ton
tstg
See specified Test Circuit
Tutn-off time
toff
Collector output capacitance
Cob VCB= -10V, f=1MHz
Transition frequency
fT
VCE= -2V, IC= -100 mA
■ Classification of hfe(1)
Type
2SA1729-Q
2SA1729-R
2SA1729-S
Range
70-140
100-200
140-280
Marking
AGQ
AGR
AGS
Unit
V
A
W
℃
Min
-50
-40
-5
70
25
Typ Max Unit
V
-1
uA
-1
-0.3 -0.8
V
-0.9 -1.3
280
50 100
120 220 ns
150 300
18
pF
300
MHz
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