2SA1729 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – High-Speed Switching Applications

SMD Type
Transistors
High-Speed Switching Applications
2SA1729
Features
Adoption of FBET, MBIT Process.
Large Current Capacity.
Low Collector-to-Emitter Saturation Voltage.
High-Speed Switching.
Small-Sized Package.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-1.5
A
Collector Current (Pulse)
ICP
-3
A
Collector Dissipation
PC *
1.3
W
Jumction temperature
Tj
150
Storage temperature Range
Tstg
* Mounted on ceramic board (250 mm² x 0.8 mm)
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Gain-Bandwidth Product
Output Capacitance
Turn-ON Time
Storage Time
Turn-OFF Time
Symbol
Testconditons
ICBO VCB = -40V , IE = 0
IEBO VEB = -3V , IC = 0
VCE = -2V , IC = -100mA
hFE
VCE = -2V , IC = -1.5A
VCE(sat) IC = -800mA , IB = -40mA
VBE(sat) IC = -800mA , IB = -40mA
V(BR)CBO IC = -10ìA, IE = 0
V(BR)CEO IC = -1mA, RBE =
V(BR)EBO IE = -10ìA, IC = 0
fT VCE = -2V , IC = -100mA
Cob VCB = -10V , f = 1MHz
ton
tstg See Test Circuit
toff
Min Typ Max Unit
-1 ìA
-1 ìA
70
280
25
-0.3 -0.8 V
-0.9 -1.3 V
-50
V
-40
V
-5
V
300
MHz
18
pF
50 100 ns
120 220 ns
150 300 ns
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