2SA1685_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1685
Transistors
■ Features
● Fast switching speed.
● High gain-bandwidth product.
● Low saturation voltage.
● Complementary to 2SC4443
1.Base
2.Emitter
3.Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-40
Collector - Emitter Voltage
VCEO
-20
V
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
Collector Current -Pulse
IC
-150
mA
ICp
-300
Collector Power Dissipation
PC
150
mW
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
Ic= -100 uA， IE=0
Ic= -1 mA，RBE= ∞
IE= -100 uA， IC=0
VCB= -30 V , IE=0
VEB= -4V , IC=0
IC=-10 mA, IB=-1 mA
Base - emitter saturation voltage
VBE(sat) IC=-10 mA, IB=-1 mA
DC current gain
Delay Time
Rise Time
Storage time
hFE VCE= -1V, IC= -10 mA
td
tr
See specified Test Circuit
tstg
Fall time
tf
Collector output capacitance
Transition frequency
Cob VCB= -10V, f=1MHz
fT
VCE= -10V, IC= -10 mA
■ Classification of hfe
Type
2SA1685- YL3 2SA1685-YL4
Range
60-120
90-180
Marking
YL3
YL4
Min Typ Max Unit
-40
-20
V
-5
-0.1
uA
-0.1
-0.07 -0.2
V
-0.75 -1
60
180
14 20
11 20
ns
80 180
16 25
2.9
pF
400
MHz
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