2SA1681_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1681
Transistors
■ Features
● Low saturation voltage
● High speed switching time
● Small flat package
● PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
● Complementary to 2SC4409
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Tstg
Rating
-60
-50
-6
-2
-0.2
500
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on time
Storage time
Fall time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 uA， IE=0
VCEO Ic= -1 mA，IB=0
VEBO IE= -100 u A， IC=0
ICBO VCB= -60 V , IE=0
IEBO VEB= -6V , IC=0
VCE(sat) IC=-1 A, IB=-50 mA
VBE(sat) IC=-1 A, IB=-50 mA
hFE(1) VCE= -2V, IC= -100 mA
hFE(2)
ton
VCE= -2V, IC= -1.5 A
I_B2
I_B2 ^OUTPUT
tstg
tf
Cob
I_B1
INPUT _IB1
20 μs
−I_B1 = I_B2 = 0.05 A,
DUTY CYCLE ≤ 1%
−30 V
VCB= -10V,IE=0, f=1MHz
fT
VCE= -2V, IC= -100 mA
■ Marking
Marking
L*A
Unit
V
A
mW
℃
Min Typ Max Unit
-60
-50
V
-6
-0.1
uA
-0.1
-0.5
V
-1.2
120
400
40
0.1
0.3
us
0.1
23
pF
100
MHz
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