2SA1664_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1664
Transistors
■ Features
● Small Flat Package
● High Current Application
● High Transition Frequency
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
-35
-30
-5
-800
500
250
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -1mA， IE=0
VCEO Ic= -10 mA，IB=0
VEBO IE= -1mA， IC=0
ICBO VCB= -35 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-500 mA, IB=-20 mA
VBE(sat) IC=-500 mA, IB=-20 mA
VBE VCE= -1V, IC= -10mA
hFE(1) VCE= -1V, IC= -100mA
hFE(2) VCE= -1V, IC= -700mA
Cob VCB= -10V,IE=0, f=1MHz
fT
VCE= -5V, IC= -10mA
■ Classification of hfe(1)
Type
Range
Marking
2SA1664-O
100-200
RO
2SA1664-Y
160-320
RY
Unit
V
mA
mW
℃/W
℃
1.Base
2.Collector
3.Emitter
Min Typ Max Unit
-35
-30
V
-5
-0.1
uA
-0.1
-0.7
-1.2 V
-0.5
-0.8
100
320
35
19
pF
120
MHz
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