2SA1617 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

SMD Type
Silicon PNP Epitaxial
2SA1617
TransistIoCrs
Features
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Unit: mm
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Symbol
Rating
Unit
VCBO
-55
V
VCEO
-50
V
VEBO
-5
V
IC
-100
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
V(BR)CBO IC = -10ìA , IE = 0
V(BR)CEO IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
ICBO VCB = -30V, IE=0
IEBO VEB = -2V, IC=0
hFE VCE = -12V , IC = -2mA
VCE(sat) IC = -10mA , IB = -1mA
VBE VCE = -12V , IC = -2mA
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-55
V
-50
V
-5
V
-0.5 ìA
-0.5 ìA
100
320
-0.2 V
-0.8 V
hFE Classification
Marking
VI
Rank
hFE
B
100 200
C
160 320
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