2SA1615-Z Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon Power Transistors

SMD Type
Silicon Power Transistors
2SA1615-Z
Transistors
Features
Large current capacity.
High hFE and low collector saturation voltage.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Base
2 Collector
3 Emitter
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current pulse
Base current
Total power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-30
V
VCEO
-20
V
VEBO
-10
V
IC
-10
A
Icp *
-15
A
IB
-0.5
A
PT
1.0
W
Tj
150
Tstg
-55 to +150
* PW 10 ms, duty cycle 50%
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Fall time
* Pulse test: tp 350 ìs; d 0.02.
Symbol
Testconditons
ICBO VCB = -20V, IE=0
IEBO VEB = -8V, IC=0
VCE = -2V , IC = -0.5A
hFE
VCE = -2.0 V, IC =-4.0 A
VCE(sat) IC = -4A , IB = -0.05A
VBE(sat) IC = -4A , IB = -0.05A
fT VCE = -5V , IE = 1.5A
Cob VCB = -10V , IE = 0 , f = 1.0MHz
ton IC = -5.0 A, IB1 = -IB2 = 0.125 A,
tstg RL = 2.0 , VCC = -10 V
tf
Min Typ Max Unit
-1 ìA
-1 ìA
200
600
160
-0.2 -0.25 V
-0.9 -1.2
180
MHz
220
pF
80
ns
300
ns
60
ns
hFE Classification
Marking
hFE
L
200 400
K
300 600
www.kexin.com.cn ¹