2SA1612_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1612
Transistors
■ Features
● High DC Current Gain
● Complementary to 2SC4180
1.Base
2.Emitter
3.Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-120
Collector - Emitter Voltage
VCEO
-120
V
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
IC
-50
mA
Collector Power Dissipation
PC
150
mW
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -120 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-10 mA, IB=-1 mA
VBE(sat) IC=-10 mA, IB=-1 mA
VBE VCE= -6V, IC= -1mA
hFE(1) VCE= -6V, IC= -0.1mA (Note.1)
hFE(2) VCE= -6V, IC= -1mA
Cob VCB= -30V,IE=0, f=1MHz
fT
VCE= -6V, IC= -1mA
Min
-120
-120
-5
-0.55
100
135
50
Typ Max
-0.1
-0.1
-0.09 -0.3
-1.2
-0.61 -0.65
500
500 900
2
3
90
Unit
V
uA
V
pF
MHz
■ Classification of hfe(2)
Type
Range
Marking
2SA1612-C15
135-270
C15
2SA1612-C16
200-400
C16
2SA1612-C17
300-600
C17
2SA1612-C18
450-900
C18
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