2SA1611_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1611
Transistors
■ Features
● High DC Current Gain
● High Voltage
● Complementary to 2SC4177
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
-60
-50
-5
-100
150
833
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
Collector- emitter breakdown voltage
VCEO Ic= -1 mA，IB=0
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
Collector-base cut-off current
ICBO VCB= -60 V , IE=0
Emitter cut-off current
IEBO VEB= -5V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-100 mA, IB=-10 mA
Base - emitter saturation voltage
VBE(sat) IC=-100 mA, IB=-10 mA
Base - emitter voltage
VBE VCE= -6V, IC= -1mA
DC current gain
(Note.1)
hFE VCE= -6V, IC= -1mA
Collector output capacitance
Cob VCB= -10V,IE=0, f=1MHz
Transition frequency
fT
VCE= -6V, IC= -10mA
Note.1: Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
■ Classification of hfe
Type
2SA1611-M4
Range
90-180
Marking
M4
2SA1611-M5
135-270
M5
2SA1611-M6
200-400
M6
2SA1611-M7
300-600
M7
1.Base
2.Emitter
3.Collector
Unit
V
mA
mW
℃/W
℃
Min Typ Max Unit
-60
-50
V
-5
-0.1
uA
-0.1
-0.3
-1.2 V
-0.58
-0.68
90
600
4.5
pF
180
MHz
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