2SA1608_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1608
Transistors
■ Features
● High fT : fT=400MHz
● Complementary to 2SC3739
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
-60
-40
-5
-500
150
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
(Note.1)
Turn-on time
Storage time
Turn-off time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -40 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-500 mA, IB=-50 mA
VBE(sat) IC=-500 mA, IB=-50 mA
hFE(1) VCE= -2V, IC= -150mA
hFE(2) VCE= -2V, IC= -500mA
ton
tstg
Vcc=-30V,IC=-150mA,
IB1=-IB2= -15mA
toff
Cob VCB= -10V,IE=0, f=1MHz
fT
VCE= -10V, IC= -20mA
■ Classification of hfe (1)
Type
Range
Marking
2SA1608-Y12
75-150
Y12
2SA1608-Y13
100-200
Y13
2SA1608-Y14
150-300
Y14
1.Base
2.Emitter
3.Collector
Unit
V
mA
mW
℃
Min Typ Max Unit
-60
-40
V
-5
-0.1
uA
-0.1
-0.45 -0.75
V
-1 -1.3
75 140 300
20 50
25
70
ns
100
5
8
pF
150 400
MHz
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