2SA1587_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1587
Transistors
■ Features
● High voltage
● Low noise
● Complementary to 2SC4117
● Small Package
1.Base
2.Emitter
3.Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-120
VCEO
-120
V
VEBO
-5
IC
-100
mA
IB
-20
PC
100
mW
TJ
125
℃
Tstg
-55 to 125
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Noise figure
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -120 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-10 mA, IB=-1 mA
VBE(sat) IC=-10 mA, IB=-1 mA
hFE VCE= -6V, IC= -2mA
NF
VCE= -6V,
IC= 0.1mA,f=1KHz,Rg=10KΩ
Cob VCB= -10V,IE=0, f=1MHz
fT
VCE= -6V, IC= -1mA
■ Classification of hfe
Type
2SA1587-G
Range
200-400
Marking
CG
2SA1587-L
350-700
CL
Min Typ Max Unit
-120
-120
V
-5
-0.1
uA
-0.1
-0.3
V
-1.2
200
700
1 10 dB
4
pF
100
MHz
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