2SA1586_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1586
Transistors
■ Features
● High DC Current Gain
● High Voltage and High Current.
● Complementary to 2SC4116
● Small Package
1.Base
2.Emitter
3.Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
-50
-50
-5
-150
100
1250
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -50 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-100 mA, IB=-10 mA
VBE(sat) IC=-100 mA, IB=-10 mA
hFE VCE= -6V, IC= -2mA
Cob VCB= -10V,IE=0, f=1MHz
fT
VCE= -10V, IC= -1mA
■ Classification of hfe
Type
2SA1586-O
Range
70-140
Marking
SO
2SA1586-Y
120-240
SY
2SA1586-G
200-400
SG
Unit
V
mA
mW
℃/W
℃
Min Typ Max Unit
-50
-50
V
-5
-0.1
uA
-0.1
-0.3
V
-1.2
70
400
7
pF
80
MHz
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