2SA1580_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
TransistIoCrs
PNP Transistors
2SA1580
Features
High fT.
Small reverse transfer capacitance.
Adoption of FBET process.
● Complementary to 2SC4104
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Icp
PC
Tj
Tstg
Rating
-70
-60
-4
-50
-100
200
150
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Base-collector time constant
Reverse transfer capacitance
Output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，R BE =∞
VEBO IE= -100μA， IC=0
ICBO VCB= -40 V , IE=0
IEBO VEB= -3V , IC=0
VCE(sat) IC=-20mA, IB=- 2mA
VBE(sat) IC=-20mA, IB=- 2mA
hFE VCE= -10, IC= -10mA
rbb,Cc VCE= -10V, IC= 10mA
Cre VCB= -10V, f=1MHz
Cob VCB= -10V, f=1MHz
fT
VCE= -6V, IE= 10mA
■ Classification of hfe
Type
Range
Marking
2SA1580-QL3
60-120
QL3
2SA1580-QL4
90-180
QL4
2SA1580-QL5
135-270
QL5
Unit
V
V
V
mA
mA
mW
Min Typ Max Unit
-70
-60
V
-4
-0.1
uA
-1
-0.6
V
-1
60
270
8
ps
1.3
pF
1.7
180
MHz
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