2SA1580 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – High-Definition CRT Display Applications

SMD Type
TransistIoCrs
PNP Epitaxial Planar Silicon Transistor
2SA1580
Features
High fT.
Small reverse transfer capacitance.
Adoption of FBET process.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-70
V
VCEO
-60
V
VEBO
-4
V
IC
-50
mA
Icp
-100
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Base-collector time constant
Output capacitance
Reverse transfer capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
Testconditons
ICBO VCB = -40V, IE=0
IEBO VEB = -3V, IC=0
hFE VCE = -10V , IC = -10mA
fT VCE = -10V , IC = -10mA
rbb,cc VCE = -10V , IC = -10mA
Cob VCB = -10V , f = 1.0MHz
Cre VCB = -10V , f = 1.0MHz
VCE(sat) IC = -20mA , IB = -2mA
VBE(sat) IC = -20mA , IB = -2mA
V(BR)CBO IC = -10ìA , IE = 0
V(BR)CEO IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
hFE Classification
Marking
Rank
hFE
3
60 120
QL
4
90 180
5
135 270
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-0.1 ìA
-1 ìA
60
270
350 700
MHz
8
ps
1.7
pF
1.3
pF
-0.6 V
-1
V
-70
V
-60
V
-4
V
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