2SA1579_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1579
Transistors
■ Features
● High breakdown voltage. (BVCEO = -120V)
● Complements the 2SC4102.
1.Base
2.Emitter
3.Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-120
VCEO
-120
V
VEBO
-5
IC
-50
mA
PC
100
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -50 μA， IE=0
VCEO Ic= -1 mA，IB=0
VEBO IE= -50μA， IC=0
ICBO VCB= -100 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-10 mA, IB=-1 mA
VBE(sat) IC=-10 mA, IB=-1 mA
hFE VCE= -6V, IC= -2mA
Cob VCB= -12V,IE=0, f=1MHz
fT
VCE= -12V, IC= -2mA,f=30MHz
Min Typ Max Unit
-120
-120
V
-5
-0.5
uA
-0.5
-0.5
V
-1.2
180
560
3.2
pF
140
MHz
■ Classification of hfe
Type
2SA1579-R
Range
180-390
Marking
RR
2SA1579-S
270-560
RS
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