2SA1577_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1577
Transistors
■ Features
● Large IC. CMax.=-500mA
● Low VCE(sat).Ideal for low-voltage operation.
● Complements the 2SC4097.
1.Base
2.Emitter
3.Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-40
Collector - Emitter Voltage
VCEO
-32
V
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
IC
-500
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -20 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-100 mA, IB=-10 mA
VBE(sat) IC=-100 mA, IB=-10 mA
hFE VCE= -3V, IC= -10mA
Cob VCB= -10V,IE=0, f=1MHz
fT VCE= -5V, IC= -20mA,f=100MHz
Min Typ Max Unit
-40
-32
V
-5
-1
uA
-1
-0.4
V
-1.2
82
390
7
pF
200
MHz
■ Classification of hfe
Type
Range
Marking
2SA1577-P
82-180
HP
2SA1577-Q
120-270
HQ
2SA1577-R
180-390
HR
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